Multilayer electronic component

ABSTRACT

The present invention relates to a multilayer electronic component which includes an element body where a plurality of internal electrode layers and dielectric layers are alternately laminated. Insulating layers are disposed on a pair of side surfaces of the element body, facing each other. The insulating layers contain a glass composition and a ceramic composition.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a multilayer electronic component.

2. Description of the Related Art

In recent years, as the electronic circuits used in digital electronicdevices such as mobile phones tend to become high density, higher demandis made on the miniaturization of electronic components, and themultilayer electronic components used to form the circuit developrapidly toward miniaturization and high capacity.

For example, in multilayer electronic components such as a multilayerceramic capacitor, a plurality of internal electrodes are disposedinside a ceramic sintered body.

In patent document 1, a multilayer ceramic capacitor with a no-side-gapstructure is proposed to improve the utilizing efficiency of theelectrode materials or to raise the electrostatic capacitance or theaccuracy, etc.

However, there is a problem that the withstand voltage is low becausethe internal electrodes are exposed from a side surface of the ceramicsintered body.

In patent document 2, a structure able to increase withstand voltage isproposed. That is, after a ceramic sintered body in which the internalelectrode is exposed from a pair of side surfaces is obtained, thesection near the side edge of the internal electrode is removed. Next,insulating materials are injected into the removed section to form aninsulating layer, thus increasing the withstand voltage.

In patent document 3, a method for manufacturing a ceramic sintered bodyis proposed, in which glass is precipitated on the external surface ofthe ceramic sintered body because the ceramic composition of the ceramicsintered body contains glass composition of a specific weight ratio, bywhich a ceramic sintered body covered by an insulating layer with glassas the main composition is obtained.

However, when glass is used in the insulating layer, there is risk thatcracks emerge in the glass due to external shock and the cracks mayextend to the ceramic green body because of property of the glass. Ifthe cracks reach the ceramic sintered body, it will be easy forinfiltration of the plating liquid or decrease of the moistureresistance to occur during the plating step.

[Patent document 1] Japanese examined patent application No. 2-30570

[Patent document 2] Japanese laid-open patent application No. 3-82006

[Patent document 3] Japanese laid-open patent application No. 11-340089

SUMMARY OF THE INVENTION

In view of the above situation, the present invention aims to provide amultilayer electronic component with excellent moisture resistance.

Means for Solving the Problem

In order to achieve the above purpose, the multilayer electroniccomponent of the present invention is as follows.

[1] A multilayer electronic component including an element body where aplurality of internal electrode layers and dielectric layers arealternately laminated, in which insulating layers are disposed on atleast one side surface of the element body, and the insulating layerscontain a glass composition and a ceramic composition.

According to the present invention, a multilayer electronic componentwith excellent moisture resistance is provided.

The following embodiments are illustrated as specific embodiments of theabove-mentioned [1].

[2] The multilayer electronic component according to [1], in which whenthe whole insulating layer is 100 wt %, a content of the ceramiccomposition is 10-70 wt %.

[3] The multilayer electronic component according to [1] or [2], inwhich the ceramic composition includes an oxide containing at least oneelement from a group of Al, Zr, Ti, Ce, Fe, Mn, Cu, Co and Zn.

[4] The multilayer electronic component according to any one of [1]-[3],in which when the whole glass composition is 100 wt %, the glasscomposition includes 35-75 wt % of SiO₂.

-   [5] The multilayer electronic component according to any one of    [1]-[4], in which when the whole glass composition is 100 wt %, the    glass composition includes 10-35 wt % of alkali metals.

[6] The multilayer electronic component according to any one of [1]-[5],in which when the whole glass composition is 100 wt %, the glasscomposition includes 10-50 wt % of BaO.

[7] The multilayer electronic component according to any one of [1]-[6],in which when the whole glass composition is 100 wt %, the glasscomposition includes 1-10 wt % of Al₂O₃.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view of a multilayer ceramiccapacitor according to an embodiment of the present invention.

FIG. 2 is a cross sectional view along the II-II line in FIG. 1.

FIG. 3 is a schematic view illustrating a method for strain experimentof the example.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will now be described in detail based on thepresent embodiment referring to the drawings, but the present inventionis not limited to the following embodiments.

In addition, the structural elements described below include those whichcan be easily assumed by one of ordinary skill in the art and thosesubstantially the same. Furthermore, the structural elements describedbelow can be properly combined.

The present invention is described below based on the embodiments shownin the figures.

The Overall Structure of a Multilayer Ceramic Capacitor

The overall structure of a multilayer ceramic capacitor is described asone embodiment of a multilayer electronic component of the presentembodiment.

As shown in FIG. 1, the multilayer ceramic capacitor 2 of the presentembodiment includes a ceramic sintered body 4, a first externalelectrode 6, and a second external electrode 8. In addition, as shown inFIG. 2, the ceramic sintered body 4 includes an element body 3 andinsulating layers 16.

The element body 3 includes inside dielectric layers 10 and internalelectrode layers 12, which are substantially parallel to a planeincluding the X axis and the Y axis. The internal electrode layers 12are alternately laminated between the inside dielectric layers 10 alongthe direction of the Z axis. Here, “substantially parallel” means thatmost parts are parallel, but parts that are slightly un-parallel mayalso exist, that is, the internal electrode layers 12 and the insidedielectric layers 10 may have a little concavity and convexity or maytilt slightly.

The parts where the inside dielectric layers 10 and the internalelectrode layers 12 are alternately laminated are interior regions 13.

In addition, the element body 3 has exterior regions 11 on both endsurfaces in the lamination direction Z (the Z axis). The exteriorregions 11 are formed by laminating a plurality of outside dielectriclayers which are thicker than the inside dielectric layers 10 formingthe interior regions 13.

Moreover, “the inside dielectric layers 10” and “the outside dielectriclayers” are referred to as “the dielectric layers” in some cases below.

The material of the dielectric layers forming the inside dielectriclayers 10 and the exterior regions 11 may be the same or different, andare not specially limited. For example, they can be formed by takingdielectric material with a perovskite structure represented by achemical formula such as ABO₃ as the main composition.

In the ABO₃, A is not specially limited, however, it exemplifies atleast one element chosen from a group of Ca, Ba and Sr. B is notspecially limited, however, it exemplifies at least one element chosenfrom a group of Ti and Zr. The molar ratio of A/B, is not speciallylimited, however, it is 0.980-1.020 for example. In addition, rare earthoxides, alkali earth metal oxides, magnesium oxide and transition metaloxides, etc. may be exemplified as the subcomposition in the dielectricmaterial. Also, mixtures containing the above oxides are exemplified.Complex oxides containing any one of the above element are exemplified.Furthermore, sintering aids containing SiO₂ are exemplified as glass.The rare earth element is at least one chosen from Sc, Y, La, Ce, Pr,Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The transition metalsmay be V, W, Mn and Mo or other transition metals.

One end of the alternately laminated internal electrode layers 12 has alead-out section 12A electrically connected to the inner side of thefirst external electrode 6 which is formed on the external side of afirst end of the ceramic sintered body 4 in the Y axis direction. Andthe other end of the alternately laminated internal electrode layers 12has a lead-out section 12B electrically connected to the inner side ofthe second external electrode 8 which is formed on the external side ofa second end of the ceramic sintered body 4 in the Y axis direction.

The interior regions 13 have a capacity region 14 and lead-out regions15A, 15B. The capacity region 14 is a region where the internalelectrode layers 12 are laminated with the inside dielectric layers 10in-between along the lamination direction. The lead-out region 15A is aregion located between the lead-out sections 12A of the internalelectrode layers 12 connected to the external electrode 6. The lead-outregion 15B is a region located between the lead-out sections 12B of theinternal electrode layers 12 connected to the external electrode 8.

The conductive material contained in the internal electrode layers 12are not specially limited and can be metals such as Ni, Cu, Ag, Pd, Al,Pt, or their alloys. It is especially preferred to utilize Ni or Nialloys. When Ni alloys are utilized, alloys of more than one elementchosen from Mn, Cr, Co and Al with Ni are preferred, and a Ni content of95 wt % or higher in the alloys is preferred. Additionally, Ni or the Nialloys may contain various trace compositions such as P with a contentapproximately 0.1 wt % or less.

As shown in FIG. 2, on the two end surfaces of the ceramic sintered body4 in the X axis direction, i.e. the side surfaces where the ends of theinternal electrodes 12 expose, the insulating layers 16 which cover theends of the internal electrode layers 12 of the element body 3 aredisposed. The side surface where the insulating layers 16 are disposedmay be only one of the end surfaces in the X axis direction. Besides,the insulating layers 16 may also be formed on the upper section and/orlower section of the ceramic sintered body 4 in the Z axis direction(the lamination direction).

The insulating layers 16 contain the glass composition and the ceramiccomposition.

Since the insulating layers 16 contain both the glass composition andthe ceramic composition, the moisture resistance can be prevented fromdecreasing. The inventors think the reason for moisture resistanceimprovement is that since the insulating layers 16 contain the ceramiccomposition, the cracks can be prevented from reaching the element body3 even if cracks emerge inside the insulating layers 16. Moreover, theceramic composition is contained in the form of, for example, a ceramicfiller.

Although there is no special limit on the content of the ceramiccomposition in the insulating layers 16, it is preferably 10-70 wt %when the whole insulating layer is 100 wt %. If the content is 10 wt %or more, the effect of preventing crack extension will rise. If thecontent is 70 wt % or less, the sintering property of the insulatinglayers 16, especially the sintering property of gap section mentionedlater can be improved, and the moisture resistance be further improved.Besides, when the content is 10-70 wt %, the compressive stress becomeshigh, so the strain stress and the strain strength can also beincreased. The content of the ceramic composition is more preferably30-60 wt %, and the most preferably 40-56 wt %.

Although there is no special limit on the ceramic composition of theinsulating layers 16, it is preferable to include oxides containing atleast one element chosen from Al, Zr, Ti, Ce, Fe, Mn, Cu, Co and Zn. Theoxides containing at least one element chosen from Al, Zr, Ti, Ce, Fe,Mn, Cu, Co and Zn include complex oxides containing at least one elementfrom these elements. It is more preferable to include the oxidescontaining at least one element chosen from Cu, Co, Ce, Mn, Al, Zr andTi, and further preferable to include the oxides containing at least oneelement chosen from Cu and Co. In the cases including the oxidescontaining at least one element chosen from Cu and Co, comparing withcases using oxides of other elements only, cracks reaching the greenbody can be further prevented.

By including the oxides containing at least one element chosen from Al,Zr, Ti, Ce, Fe, Mn, Cu, Co and Zn, the emergence of crack coming fromthe inside of a gap section of the insulating layers 16 can beinhibited. The reason for the crack inhibition is not clear, and theinventors think the reason is that the reaction between the oxidecontaining at least one element chosen from Al, Zr, Ti, Ce, Fe, Mn, Cu,Co and Zn with glass is relatively slow. Furthermore, by containing theoxide with at least one element chosen from Al, Zr, Ti, Ce, Fe, Mn, Cu,Co and Zn, the strain stress and the strain strength can also beimproved.

In addition, there is no upper limit on the content of Ba in the ceramiccomposition of the insulating layers 16, and when the whole ceramiccomposition is 100 wt %, the content converted to the content of BaO ispreferably 50 wt % or less. Similarly, the content of Ca, converted tothe content of CaO, is preferably 50 wt % or less, and the content ofSr, converted to the content of SrO, is preferably 50 wt % or less. Andwhen the content of Ba, the content of Ca and the content of Sr areconverted to the content of BaO, CaO and SrO respectively, it ispreferable that the total content of Ba, Ca and Sr is 50 wt % or less.

Although there is no special limit on the glass composition of theinsulating layers 16, a content of 35-75 wt % of SiO₂ is preferred whenthe overall glass composition is 100 wt %.

By containing 35 wt % or more of SiO₂ in the glass composition of theinsulating layers 16, the plating tolerance is increased. Besides, bycontaining 75 wt % or less of SiO₂, the emergence of cracks inside theinsulating layers 16 is easily inhibited. Although it is not clear aboutthe reason why the emergence of cracks is easily inhibited by containing75 wt % or less of SiO₂, and the inventors considers that thebrittleness of the insulating layers 16 tends to be high when thecontent of SiO₂ exceeds 75%.

When the overall glass composition is 100 wt %, it is preferable for theinsulating layers 16 to contain 10-35 wt % of the alkali metal.

By containing 10 wt % or more of alkali metal in the glass compositionof the insulating layers 16, the strain strength on the chip increases.Although the reason for the increase of the strain strength on the chipis not clear, the inventors considers that that it is because it becomeseasy to apply compressive stress to the insulating layers 16 when thesoftening point of the glass composition decreases and it becomes easyto properly react with the ceramic composition. Besides, by containing35 wt % or less of alkali metal, the electrical resistivity of the glasscomposition increases, and the withstand voltage can be increased.

When the overall glass composition of the insulating layers 16 is 100 wt%, the content of BaO is preferably 10-50 wt %.

By containing 10 wt % or more of BaO in the glass composition of theinsulating layers 16, the plating tolerance tends to increase. Besides,by containing 50 wt % or less of BaO, the plating tolerance tends toincrease.

When the overall glass composition of the insulating layers 16 is 100 wt%, the content of Al₂O₃ is preferably 1-10 wt %.

By making the content of Al₂O₃ in the glass composition of theinsulating layers 16 range from 1 wt % or more to 10 wt % or less, theplating tolerance increases.

Other compounds may be contained as the glass composition of theinsulating layers 16. For example, CaO, SrO, B₂O₃ can be exemplified.There is no special limit on the content amount of other compounds.

There is no special limit on the material of the external electrodes 6,8, and at least one element from Ni, Pd, Ag, Au, Cu, Pt, Rh, Ru, Ir, orthe alloy of these elements can be used. Usually, Cu, Cu alloy, Ni, Nialloy, Ag, Ag—Pd alloy, In—Ga alloy, and etc. are used.

Moreover, in FIG. 1, the X axis, the Y axis and the Z axis are verticalto each other, the Z axis corresponds to the lamination direction of theinside dielectric layers 10 and the internal electrode layers 12, andthe Y axis corresponds to the direction in which the lead-out regions15A, 15B (lead-out sections 12A, 12B) are formed.

The shape and size of the element body 3 may be suitably decidedaccording to its purpose or application, and it is preferable that thewidth W0 in the X axis direction ranges from 0.1 mm to 1.6 mm, thelength L0 in the Y axis direction ranges from 0.2 mm to 3.2 mm, and theheight H0 in the Z axis direction ranges from 0.1 mm to 1.6 mm.

In the present embodiment, as shown in FIG. 2, the section in theinsulating layers 16, from the end surface of the element body 3 in theX axis direction to the external surface of the insulating layers 16along the width direction (the X axis direction) of the ceramic sinteredbody 4, is called a gap section.

In the present embodiment, the width Wgap of the gap section in the Xaxis direction corresponds to the size from the end surface of theelement body 3 in the X axis direction to the end surface of theinsulating layers 16 in the X axis direction along the width direction(X axis direction) of the ceramic sintered body 4, but it is notnecessary for the width Wgap to be even along the Z axis direction, anda little variation is allowed. The width Wgap is preferably 0.5-30 μm,much lower than the width W0 of the element body 3.

By setting Wgap in the above range, cracks are hard to emerge, and evenif the ceramic sintered body 4 is more miniaturized, the electrostaticcapacitance decreases little.

In the present embodiment, as shown in FIG. 2, covering sections 16 a,which cover the X axis direction ends of the two end surfaces of theelement body 3 in the Z axis direction, are formed integrally with theinsulating layers 16 at both ends of the insulating layers 16 in the Zaxis direction. The respective width W1 in the X axis direction from thetwo end surfaces of the element body 3 in the X axis direction to thecovering section 16 is zero or more and is at most ½ of the width W0. Inaddition, the width W1/W0 is preferably 1/100- 1/10. By setting W1/W0 insuch a range, high sealability can be maintained and thermal shockresistance can be raised.

Moreover, the width Wgap on the two sides of the ceramic sintered body 4in the X axis direction can be the same or different from each other.Besides, the width W1 on the two sides of the ceramic sintered body 4 inthe X axis direction can also be the same or different from each other.It is preferred that the insulating layers 16 do not cover the two endsurfaces of the element body 3 shown in FIG. 1 in the Y axis direction.The reason is that it is necessary to form the external electrodes 6, 8on the two end surfaces of the element body 3 in the Y axis direction toconnect with the internal electrodes 12. The external electrodes 6, 8may cover a part of the Y axis direction ends of the covering sections16 a shown in FIG. 2, or may cover a part of the Y axis direction endsof the insulating layers 16.

There is no special limit on the ratio of a thickness td of the insidedielectric layers 10 to a thickness to of the internal electrode layers12, and td/te is preferably 2-0.5. There is also no special limit on theratio of a thickness to of the exterior regions 11 to a height H0 of theelement body 3, and to/H0 is preferably 0.01-0.05.

The Manufacturing Method of the Multilayer Ceramic Capacitor

Next, the manufacturing method of the multilayer ceramic capacitor 2 asone embodiment of the present invention is described in detail.

First, prepare paste for inside green sheet and paste for outside greensheet to manufacture an inside green sheet which forms, after firing,the inside dielectric layers 10 shown in FIG. 1 and an outside greensheet which forms the outside dielectric layers.

The paste for the inside green sheet and the paste for the outside greensheet are usually constituted by organic solvent based paste, obtainedby kneading the ceramic powder with organic vehicle, or by water basedpaste.

The raw material of the ceramic powder can be suitably chosen fromcompounds that become complex oxides or oxides, such as carbonates,nitrates, hydroxides, organic metal compounds, and be mixed for use. Inthe present embodiment, the raw material of the ceramic powder is usedin the form of powder with an average particle size of less than 0.45μm, preferably about 0.1-0.3 μm. Moreover, in order to make extremelythin inside green sheet, it is ideal to use powder that is finer thanthe thickness of the green sheet.

The organic vehicle is obtained by solving a binder in an organicsolvent. There is no special limit on the binder used in the organicvehicle as long as it is suitably chosen from common binders such asethyl cellulose, polyvinyl butyral. There is also no special limit onthe organic solvent as long as it is suitably chosen from organicsolvents such as acetone, toluene.

In addition, the paste for green sheet may include additives chosen fromvarious dispersants, plasticizers, dielectrics, subcompositioncompounds, glass frit, insulators, and etc. when necessary.

The plasticizer may take phthalate esters such as dioctyl phthalate orbenzyl butyl phthalate, adipic acid, phosphate and glycol as an example.

Besides, the paste for inside green sheet and the paste for outsidegreen sheet may use the same paste for green sheet or different pastesfor green sheet.

Next, prepare paste for internal electrode layers to manufacture theinternal electrode pattern layers which form, after firing, the internalelectrode layers 12 shown in FIG. 1. The paste for internal electrodelayers is prepared by kneading the conductive materials including theabove mentioned conductive metals or alloys with the organic vehicle.

The paste for external electrodes which form, after firing, the externalelectrodes 6, 8 shown in FIG. 1 is prepared in the same way as the pastefor internal electrode layers does.

Use the above-mentioned prepared paste for inside green sheet and thepaste for internal electrode layers to alternately laminate the insidegreen sheets with the internal electrode pattern layers in order tomanufacture an inner multilayer body. Then, after the inner multilayerbody is manufactured, use the paste for outside green sheet to formoutside green sheets, and apply pressure in the lamination direction toobtain a green multilayer body.

There is no special limit on the method to form internal electrodepattern layers. The internal electrode pattern layers may be formed byprinting method or transcription method using the paste for internalelectrode layer, or by a thin-film forming method such as evaporation orsputtering without using paste for internal electrode layer.

Besides, as to the manufacturing method of the green multilayer body,the green multilayer body may also be obtained by directly laminating aspecific number of the inside green sheets and the internal electrodepattern layers on the outside green sheets and applying pressure in thelamination direction.

Next, cut the green multilayer body to obtain a green chip.

The green chip is removed from the plasticizer and is solidified thereofby solidification drying. The green chip after the solidification dryingis put into a barrel container together with media and polish liquid,and is barrel polished by a horizontal centrifugal barrel machine. Thegreen chip after barrel polishing is washed by water and dried. Theelement body 3 is obtained by performing a binder removing step, afiring step, and when necessary, an annealing step to the green chipafter drying.

The binder removing step, the firing step and the annealing step may beperformed continuously or independently.

End surface polishing may be performed to the two end surfaces in the Zaxis direction and the two end surfaces in the Y axis direction of theelement body 3 obtained above by barrel polishing or sandblast and soon.

Next, coat paste for insulating layer to the two end surfaces of theelement body 3 in the X axis direction and perform sintering to form theinsulating layers 16 and obtain the ceramic sintered body 4 shown inFIG. 1 and FIG. 2. The paste for insulating layer is obtained, forexample, by kneading the glass raw material, the ceramic filler, thebinder with ethyl cellulose as the main composition, and the dispersantsuch as terpineol and acetone with a mixer.

There is no special limit on the way to coat the paste for insulatinglayer onto the element body 3, for example, methods such as dipping,printing, coating, evaporation and spraying can be exemplified.

There is no limit on the baking condition of the element body 3 coatedwith the paste for insulating layer, for example, the baking can beperformed by being retained in a wet N₂ or dry N₂ atmosphere at 700°C.-1300° C. for 0.1-3 hours.

End surface polishing may be performed by barrel polishing, sandblast,etc. to the two end surfaces in the Z axis direction and to the same inthe Y axis direction of the ceramic sintered body 4 obtained by theabove method.

Next, paste for external electrode is coated to the two end surfaces inthe Y axis direction of the ceramic sintered body to which the sinteredinsulating layers 16 is baked, and firing thereof to form the externalelectrodes 6, 8. The external electrodes 6, 8 may be formed before orafter or at the same time with the formation of the insulating layers16.

There is also no special limit on the method to form the externalelectrodes 6, 8, proper methods such as coating and sintering, plating,evaporation and sputtering of the paste for external electrode can beused.

Then, a covering layer is formed by such as plating on the surface ofthe external electrodes 6, 8, when necessary.

The multilayer ceramic capacitor 2 of the present embodimentmanufactured as above is mounted to such as a print substrate by such asa soldering to be utilized in various electronic devices.

In the present embodiment, the insulating layers 16 are formed on theelement body 3 by baking the paste for insulating layer on the firedelement body 3. By using this method, the moisture resistance becomesgood, and the resistance to external environment changes such as thermalshock or physical shock can be improved.

Although the embodiments of the present invention have been described indetail, the present invention is not limited to the embodiments, andvarious changes can be made without departing from the essence of thepresent invention.

The multilayer electronic component of the present invention can beapplied to other multilayer electronic components, without limiting tothe multilayer ceramic capacitor. Other multilayer electronic componentsare all the electronic components whose dielectric layers are laminatedvia the internal electrodes, and band-pass filters, inductors,multilayer three-terminal filters, piezoelectric elements, PTCthermistors, NTC thermistors and varistors, etc. can be exemplified.

EXAMPLES

The present invention is further illustrated based on specific examplesbelow, but the present invention is not limited thereto.

First, 100 parts by mass of BaTiO₃ powder as the main composition of thedielectric material and 0.5 part by mass of SiO₂, 0.8 part by mass ofY₂O₃, 0.5 part by mass of MgO and 1.0 part by mass of MnO as thesubcomposition of the dielectric material were prepared.

Next, the prepared 100 parts by mass of BaTiO₃ powder and the rawmaterial of the subcomposition were wet grinded by a ball mill for 15hours, dried thereof to obtain the raw material (dielectrics rawmaterial) of the dielectric material.

Next, 100 parts by mass of the obtained dielectric raw material, 10parts by mass of polyvinyl butyral resin, 5 parts by mass of dioctylphthalate (DOP) as the plasticizer, and 100 parts by weight of alcoholas the solvent were mixed by the ball mill, pasted thereof and obtainedthe paste for the green sheet.

In addition, 44.6 parts by mass of Ni particles, 52 parts by mass ofterpineol, 3 parts by mass of ethyl cellulose, and 0.4 part by mass ofbenzotriazole were kneaded by a three roll mill, and slurried thereof tomake the paste for the internal electrode layer.

The paste for green sheet manufactured above was used to form an insidegreen sheet on the PET film. Next, an internal electrode pattern layerwas formed on said inside green sheet using the paste for the internalelectrode layer, and obtained an inside green sheet having an internalelectrode pattern layer.

The inside green sheet having the internal electrode pattern layer waslaminated to manufacture an inner multilayer body, after which the pastefor green sheet is used on and under the inner multilayer body to formproper pieces of outside green sheets, and then pressure is appliedthereof in the lamination direction to obtain a green multilayer body.

Next, the green multilayer body was cut to obtain green chips.

Next, binder removing treatment, firing and annealing under theconditions below were performed to the obtained green chips to obtainthe element body 3.

As to the conditions for binder removing treatment, the rate oftemperature increase was 25° C./hour, the retaining temperature was 235°C., the retaining time was 8 hours and the atmosphere was the air.

As to the firing conditions, the rate of temperature increase was600-1000° C./hour, the retaining temperature was 1100-1150° C., and theretaining time was 1 hour. The rate of temperature decrease was 200°C./hour. Besides, the atmosphere gas was humidified mixed gas of N₂ andH₂, and the oxygen partial pressure was 10⁻¹² MPa.

As to the annealing conditions, the rate of temperature increase was200° C./hour, the retaining temperature was 1050° C., the retaining timewas 3 hours, the rate of temperature decrease was 200° C./hour, and theatmosphere gas was humidified N₂ gas (oxygen partial pressure: 10⁻⁷MPa).

The humidification of the atmosphere gas used in the firing andannealing was done by a wetter.

Next, the glass powder with the glass composition shown in Table 1, theceramic filler having ceramic filler composition, the binder includingethyl cellulose as the main composition, and terpineol and acetone asthe dispersant were kneaded by the mixer to prepare the paste forinsulating layer. Note, the values shown in Table 1 are wt %.

The paste for insulating layer was coated to the end surface of theelement body 3 in the X axis direction and retained in dry N₂ atmospherein 1000° C. for 2 hours and then baked, by which the insulating layers16 were formed on the element body 3 to obtain the ceramic sintered body4. The thickness of the gap section of the insulating layers 16 was10-30 μm.

Next, the external electrodes 6, 8 were formed on the ceramic sinteredbody 4 to obtain a capacitor sample (the multilayer ceramic capacitor2). The obtained capacitor samples were evaluated according to themethod below.

<The Content Ratio of the Ceramic Composition>

The content ratio of the ceramic composition was calculated by using anSEM-EDX apparatus to analyze the insulating layers 16. As to thespecific analyzing method, first, the capacitor sample was polished tillthe cross section along the II-II line in FIG. 1 (from the end to theplace where a length in the Y axis direction is L0/2 in the element body3). Next, a measuring region of 15 μm×5 μm was set inside the insulatinglayers 16 so that the (H0/2) position in the Z axis direction became thecenter. Then, having the measuring region at the center, two measuringregions of 15 μm×5 μm inside the insulating layers 16 in the front andback of said measuring region in the Z axis direction were set withoutcontacting said measuring region. The position of the X axis directionat this moment was not specified in particular, but it is desirable thatthe position does not adjoin the boundary of the insulating layers 16and the inside dielectric layers 10 in FIG. 2 so that accurate planeanalysis which detects the composition of the dielectric layer can berealized. The SEM-EDX apparatus was used to perform plane analysis toall the three measuring regions, then the content ratio of the ceramiccomposition in each measuring region were measured considering theresults, and figured the average value thereof. Moreover, when the glasscomposition overlaps the ceramic composition, the content ratio of theceramic composition was obtained by setting the element with the highestdetection precision in the glass composition (for example, SiO₂composition) as the standard of the glass composition and figuring outthe content ratio of the glass composition. In addition, when thethickness of the insulating layers 16 was less than 5 μm, the length ofeach measuring region in the X axis direction was determined the same asthe thickness of the insulating layers 16. The length in the Z axisdirection was set to 15 μm. The results are shown in the tables.

<The Generation Rate of Cracks in the Gap Section>

Sandblast was used to scratch the side surface of the capacitor sampleon which the insulating layers 16 are formed. The conditions of thesandblast were 0.4 MPa for 5 seconds. Next, resin-embedded polishing wasperformed to the cross section of the capacitor sample. Theresin-embedded polishing was performed till the cross section along theII-II line in FIG. 1 (from the end to the place where a length in the Yaxis direction is L0/2 in the element body 3). The cross section wasobserved, and whether cracks generate in the gap section and whethercracks reach the element body 3 were observed. The process was performedon 100 capacitor samples, and the rate of capacitor samples 2 which havecracks were defined as the crack generation rate. Further, the rate ofthe capacitor samples 2 which have cracks reaching the element body 3(sometimes referred to as green body cracks hereinafter) was defined asgeneration rate of cracks reaching the element body. Then, the rate ofthe capacitor samples 2 without cracks that reach the element body 3 tothe capacitor samples 2 with cracks was defined as the prevention rateof the cracks reaching the element body (sometimes referred to as thegreen-body-reaching prevention rate hereinafter). The result is shown inthe tables.

The green body crack generation rate was regarded as good when below25%, better when 15% or less, and the best when 5% or less. In thetables, ⊚ defines a rate of 5% or less, ∘ defines a rate ranging frommore than 5% to 15% or less, Δ defines a rate ranging from more than 15%to less than 30%, and × defines a rate of 25% or more.

The crack generation rate was regarded as good when below 35%, betterwhen 25% or less, and the best when below 10%. In the tables, ⊚ definesa rate below 10%, ∘ defines a rate ranging from 10% or more to 25% orless, Δ defines a rate ranging from more than 25% to less than 35%, and× defines a rate of 35% or more.

The green-body-reaching prevention rate was regarded as good when 20% ormore, better when 40% or more, and the best when above 80% or when thecrack generation rate was 0%. In the tables, ⊚ defines a rate above 80%or a crack generation rate of 0%, ∘ defines a rate ranging from 40% ormore to 80% or less, Δ defines a rate ranging from 20% or more to lessthan 40%, and × defines a rate below 20%.

<Moisture Resistance Experiment>

The moisture resistance experiment was performed to 10 capacitor samples2 before the sandblast and 10 capacitor samples 2 after the sandblast.And withstand voltage experiment was performed to each capacitor sampleafter the moisture resistance experiment, and evaluated the decreasingrate of the average withstand voltage after the sandblast to the averagewithstand voltage before the sandblast. The decreasing rate (%) wasfigured out with the formula {(Vb/Va)−1}×100, taking the averagewithstand voltage before the sandblast as Va and the average withstandvoltage after the sandblast as Vb.

The moisture resistance experiment was done by being exposed to a 80%humidified atmosphere for 100 hours. The withstand voltage was measuredat a voltage increase rate of 10 V/s. The result is shown in the tables.

It was regarded as good when the absolute value of the withstand voltagedecreasing rate was 30% or less, better when 20% or less, and the bestwhen 5% or less. Note, the situation when the withstand voltagedecreasing rate was positive (Va<Vb) was always the best. In the tables,⊚ defines a rate of 5% or less, ∘ defines a rate ranging from more than5% to 20% or less, Δ defines a rate ranging from more than 20% to 30% orless, and × defines a rate above 30%.

<Strain Experiment>

As shown in FIG. 3, the external electrode of the capacitor sample 102was mounted to the pad section of the substrate 104 for experiment bysoldering. The material of the substrate 104 for experiment was epoxyresin with glass cloth backing. The substrate 104 for experiment was 40mm wide in the X axis direction, 100 mm long in the Y axis direction and0.8 mm thick.

The substrate 104 for experiment was disposed in an apparatus 124 shownin FIG. 3, pressed the substrate 104 for experiment by a pressing part120 so that the strain becomes 10 mm and maintained for 5 seconds, thena LCR meter was connected with experiment terminals 118A and 118B(respectively connected with the external electrodes of the capacitorsample 102 via wires) shown in FIG. 3 to measure the electrostaticcapacitance. The electrostatic capacitance was measured under afrequency of 1 kHz and 0.5 Vrm. When the electrostatic capacitancebefore pressing was C, and difference with the electrostatic capacitanceafter pressing was ΔC, it is judged qualified when ΔC/C is ±10% or less.This operation was performed to 20 capacitor samples, and it is regardedas good when a number of the unqualified samples were 3 or less, andbetter when there is no unqualified sample. The result is shown in thetables. In the tables, ⊚ defines the cases with no unqualified samplesin the strain experiment, ∘ defines the cases with 3 or less unqualifiedsamples in the strain experiment, and Δ defines the cases with more than3 unqualified samples in the strain experiment. Note, the internalstructure of the capacitor sample 102 of this example is the same as themultilayer ceramic capacitor 2 shown in FIG. 1.

<The Change in Glass Weight after the Plating Tolerance Experiment>

The paste for the insulating layer was coated to the ceramic substratethat forms each capacitor sample 2 and performed baking. The surfacearea of the glass on the ceramic substrate was 1 cm². The glasssubstrate was dipped in water solution with pH of three for 60 hours atroom temperature. Then, the change in weight of the ceramic substrate,to which glass was baked, was calculated before and after the dipping.The results are shown in the tables 3 and 4. In this example, thepreferable range for the decrease in glass weight after the platingtolerance experiment is defined less than 3 mg, and the more preferablerange is defined less than 1 mg. The results are shown in the tables. Inthe tables, ⊚ defines that the decreasing rate of glass weight after theplating tolerance experiment is less than 1 mg, ∘ defines that theplating tolerance of 1 mg or more to less than 3 mg, and × defines thatthe plating tolerance of 3 mg or more.

TABLE 1 Result of the Moisture Resistance Ceramic Filler CrackGeneration Rate Experiment Composition Green Body Green-body- Compari-Content Crack Crack reaching Before After son Glass Composition (wt %)in the Generation Generation Prevention Sandblast Sandblast BeforeAlkali Kind of Whole Rate Rate Rate With- With- And Plat- Metal FillerInsulating Gener- Gener- Preven- stand stand After Strain ing Composi-Compo- Layer/ Evalu- ation Evalu- ation Evalu- tion Voltage VoltageSandblast/ Evalu- Experi- Toler- No. SiO₂ Na₂O K₂O Li₂O tion BaO Al₂O₃Total sition wt % ation Rate/% ation Rate/% ation Rate/% (Ave)/V (Ave)/V% ation ment ance Ex-  1 44 13 12 3 28 23 5 100 Al₂O₃ 20 ⊚ 4 ◯ 13 ◯ 6987 83 −5 ⊚ ◯ ⊚ am-  2 44 13 12 3 28 23 5 100 Al₂O₃ 45 ⊚ 1 ⊚ 8 ⊚ 88 86 882 ⊚ ⊚ ⊚ ple  3 44 13 12 3 28 23 5 100 Al₂O₃ 55 ⊚ 0 ⊚ 9 ⊚ 100 89 88 −1 ⊚⊚ ⊚  4 44 13 12 3 28 23 5 100 Al₂O₃ 72 ◯ 6 ◯ 16 ◯ 63 84 79 −6 ◯ ◯ ⊚  544 13 12 3 28 23 5 100 Al₂O₃ 8 ◯ 9 ◯ 20 ◯ 55 87 80 −8 ◯ ◯ ⊚  7 44 13 123 28 23 5 100 ZrO₂ 15 ⊚ 4 ◯ 15 ◯ 73 84 80 −5 ⊚ ◯ ⊚  8 44 13 12 3 28 23 5100 ZrO₂ 40 ⊚ 0 ⊚ 9 ⊚ 100 91 89 −2 ⊚ ⊚ ⊚  9 44 13 12 3 28 23 5 100 ZrO₂55 ⊚ 1 ⊚ 8 ⊚ 88 87 87 0 ⊚ ⊚ ⊚ 10 44 13 12 3 28 23 5 100 ZrO₂ 4 ◯ 8 ◯ 16◯ 50 89 78 −12 ◯ ◯ ⊚ 11 44 13 12 3 28 23 5 100 ZrO₂ 74 ◯ 6 ◯ 19 ◯ 68 8880 −9 ◯ ◯ ⊚ 12 44 13 12 3 28 23 5 100 TiO₂ 23 ⊚ 3 ◯ 11 ◯ 73 89 85 −4 ⊚ ⊚⊚ 13 44 13 12 3 28 23 5 100 TiO₂ 55 ⊚ 1 ⊚ 8 ⊚ 88 85 83 −2 ⊚ ⊚ ⊚ 14 44 1312 3 28 23 5 100 TiO₂ 40 ⊚ 0 ⊚ 7 ⊚ 100 80 80 0 ⊚ ⊚ ⊚ 15 44 13 12 3 28 235 100 TiO₂ 76 ◯ 7 ◯ 16 ◯ 56 83 77 −7 ◯ ◯ ⊚ 16 44 13 12 3 28 23 5 100TiO₂ 6 ◯ 8 ◯ 13 ◯ 38 88 79 −10 ◯ ◯ ⊚ 17 44 13 12 3 28 23 5 100 CeO₂ 11 ⊚4 ◯ 15 ◯ 73 83 79 −5 ⊚ ⊚ ⊚ 18 44 13 12 3 28 23 5 100 CeO₂ 30 ⊚ 1 ⊚ 6 ⊚83 90 90 0 ⊚ ⊚ ⊚ 19 44 13 12 3 28 23 5 100 CeO₂ 50 ⊚ 1 ⊚ 9 ⊚ 89 86 86 0⊚ ⊚ ⊚ 20 44 13 12 3 28 23 5 100 CeO₂ 6 ◯ 7 ◯ 15 ◯ 53 88 77 −13 ◯ ◯ ⊚ 2144 13 12 3 28 23 5 100 CeO₂ 73 ◯ 9 ◯ 16 ◯ 44 89 79 −11 ◯ ◯ ⊚ 22 44 13 123 28 23 5 100 CuO 20 ⊚ 4 ◯ 10 ◯ 60 89 85 −4 ⊚ ⊚ ⊚ 23 44 13 12 3 28 23 5100 CuO 40 ⊚ 0 ⊚ 7 ⊚ 100 85 84 −1 ⊚ ⊚ ⊚ 24 44 13 12 3 28 23 5 100 CuO 56⊚ 0 ⊚ 8 ⊚ 100 86 84 −2 ⊚ ⊚ ⊚ 25 44 13 12 3 28 23 5 100 CuO 8 ◯ 7 ◯ 15 ◯53 87 73 −16 ◯ ◯ ⊚ 26 44 13 12 3 28 23 5 100 CuO 71 ◯ 6 ◯ 15 ◯ 60 88 82−7 ◯ ◯ ⊚ 27 44 13 12 3 28 23 5 100 CoO 8 ◯ 4 ◯ 9 ◯ 56 84 80 −5 ◯ ◯ ⊚ 2844 13 12 3 28 23 5 100 CoO 30 ⊚ 0 ⊚ 8 ⊚ 100 83 82 −1 ⊚ ⊚ ⊚ 29 44 13 12 328 23 5 100 CoO 42 ⊚ 0 ⊚ 6 ⊚ 100 89 87 −2 ⊚ ⊚ ⊚ 30 44 13 12 3 28 23 5100 CoO 54 ⊚ 0 ⊚ 7 ⊚ 100 88 86 −2 ⊚ ⊚ ⊚ 31 44 13 12 3 28 23 5 100 CoO 75◯ 6 ◯ 11 ◯ 45 85 80 −6 ◯ ◯ ⊚

TABLE 2 Crack Generation Rate Ceramic Filler Green Body Result of theMoisture Resistance Composition Crack Green-body- Experiment GlassComposition (wt %) Content in Generation Crack Generation reachingBefore After Comparison Alkali Kind of the Whole Rate Rate PreventionRate With- Sandblast Before And Plat- Metal Filler Insulating Gener-Gener- Preven- stand Withstand After Strain ing Compo- Compo- Layer/Evalu- ation Evalu- ation Evalu- tion Voltage Voltage Sandblast/ Evalu-Experi- Toler- No. SiO₂ Na₂O K₂O Li₂O sition BaO Al₂O₃ Total sition wt %ation Rate/% ation Rate/% ation Rate/% (Ave)/V (Ave)/V % ation ment anceExam- 32 44 13 12 3 28 23 5 100 ZnO  9 ◯ 11 ◯ 19 ◯ 42 86 76 −12 ◯ ◯ ⊚ple 33 44 13 12 3 28 23 5 100 ZnO 24 ⊚ 3 ◯ 10 ◯ 70 89 85 −4 ⊚ ⊚ ⊚ 34 4413 12 3 28 23 5 100 ZnO 57 ⊚ 4 ⊚ 9 ◯ 56 83 80 −4 ⊚ ⊚ ⊚ 35 44 13 12 3 2823 5 100 ZnO 76 ◯ 11 ◯ 20 ◯ 45 86 75 −13 ◯ ◯ ⊚ 36 44 13 12 3 28 23 5 100MnO 14 ⊚ 4 ◯ 19 ◯ 79 84 80 −5 ⊚ ⊚ ⊚ 37 44 13 12 3 28 23 5 100 MnO 34 ⊚ 1⊚ 9 ⊚ 89 86 82 −5 ⊚ ⊚ ⊚ 38 44 13 12 3 28 23 5 100 MnO 49 ⊚ 1 ⊚ 9 ⊚ 89 8483 −1 ⊚ ⊚ ⊚ 39 44 13 12 3 28 23 5 100 MnO 74 ◯ 11 ◯ 22 ◯ 50 86 76 −12 ◯◯ ⊚ 40 44 13 12 3 28 23 5 100 Fe₂O₃ 29 ⊚ 4 ◯ 15 ◯ 73 83 81 −2 ⊚ ⊚ ⊚ 4144 13 12 3 28 23 5 100 Fe₂O₃ 56 ⊚ 4 ⊚ 9 ◯ 56 84 83 −1 ⊚ ⊚ ⊚ 42 44 13 123 28 23 5 100 Fe₂O₃ 72 ◯ 12 ◯ 21 ◯ 43 90 80 −11 ◯ ◯ ⊚ 43 44 13 12 3 2823 5 100 BaO 32 ◯ 10 ◯ 25 ◯ 60 84 72 −14 ◯ ◯ ⊚ 44 44 13 12 3 28 23 5 100BaO 56 ⊚ 5 ◯ 20 ◯ 75 90 86 −4 ⊚ ◯ ⊚ 45 44 13 12 3 28 23 5 100 BaO  8 Δ16 Δ 26 Δ 38 88 65 −26 Δ ◯ ⊚ 46 44 13 12 3 28 23 5 100 BaO 74 Δ 19 Δ 26Δ 27 86 66 −23 Δ ◯ ⊚ 47 44 13 12 3 28 23 5 100 CaO 15 ◯ 11 Δ 26 ◯ 58 8978 −12 ◯ ◯ ⊚ 48 44 13 12 3 28 23 5 100 CaO 33 ◯ 7 ◯ 19 ◯ 63 90 82 −9 ◯ ◯⊚ 49 44 13 12 3 28 23 5 100 CaO 72 Δ 16 Δ 26 Δ 38 88 75 −15 Δ ◯ ⊚ 50 4413 12 3 28 23 5 100 CaO 50 ⊚ 5 ◯ 25 ◯ 80 87 83 −5 ⊚ ◯ ⊚ 51 44 13 12 3 2823 5 100 SrO  5 Δ 16 Δ 26 Δ 38 89 72 −19 Δ ◯ ⊚ 52 44 13 12 3 28 23 5 100SrO 42 ⊚ 5 ◯ 17 ◯ 71 85 81 −5 ⊚ ◯ ⊚ 53 44 13 12 3 28 23 5 100 SrO 73 Δ17 ◯ 25 Δ 32 86 70 −19 Δ ◯ ⊚ Compar- 54 44 13 12 3 28 23 5 100 metal(Fe) 20 X 26 Δ 30 X 13 87 50 −43 X ◯ ⊚ ative 55 44 13 12 3 28 23 5 100heat 26 X 45 X 45 X  0 89 54 −39 X ◯ ⊚ Exam- resistant ple resin 56Barium Titanate (non-glass) — — — X 32 Δ 33 X  3 89 50 −44 X Δ ⊚ 57 4413 12 3 28 23 5 100 —  0 X 25 Δ 30 X 17 86 59 −31 X ◯ ⊚

Samples No. 1-57 in Table 1 and Table 2, except sample No. 56, used thesame glass composition in the insulating layers 16 and changed the kindand content of the ceramic composition. Sample No. 54 (the comparativeexample) used metal particles (Fe particles) instead of the ceramicfiller. And sample No. 55 (the comparative example) used heat resistantresin particles instead of the ceramic filler. Polyimide resin was usedas the heat resistant resin. In sample No. 56 (the comparative example),the insulating layers 16 was made only from barium titanate (non-glass).Sample No. 57 (the comparative example) did not use the ceramic filler.

According to Table 1 and Table 2, comparing with samples No. 54-57 whichdo not contain the ceramic composition in the insulating layers 16,samples No. 1-53 which form the insulating layers 16 with the glasscomposition and the ceramic composition had less cracks reaching thegreen body, the rate of which was below 25%.

The samples whose content of the ceramic composition in the insulatinglayers 16 is 10-70 wt % tended to be excellent in the generation rate ofcracks reaching the green body, the crack generation rate, the crackprevention rate and the result of the moisture resistance experiment,comparing with the samples outside the range of 10-70 wt %.

The samples whose content of the ceramic composition is 30-60 wt %tended to be more excellent in the generation rate of cracks reachingthe green body, the crack generation rate, the crack prevention rate andthe result of the moisture resistance experiment. Furthermore, thesamples whose content of the ceramic composition is 40-60 wt % tended tobe even more excellent in the generation rate of cracks reaching thegreen body and the result of the moisture resistance experiment.

In the cases when the oxides of elements chosen from Al, Zr, Ti, Ce, Fe,Mn, Cu, Co and Zn are contained as the ceramic filler in the insulatinglayers 16, it tended to be excellent in the generation rate of cracksreaching the green body, the crack generation rate, the crack preventionrate and the result of the moisture resistance experiment, comparingwith the cases which do not contain the oxides of the above-mentionedelements. Furthermore, in the cases when the oxides of elements chosenfrom Al, Zr, Ti, Ce, Mn, Cu and Co are contained, the crack preventionrate tended to be excellent comparing with the cases which do notcontain the oxides of elements chosen from Al, Zr, Ti, Ce, Mn, Cu andCo.

TABLE 3 Ceramic Filler Glass Compositon (wt %) Composition Alkali Kindof Metal Filler Compo- Compo- Content/ No. SiO₂ Na₂O K₂O Li₂O sition CaOSrO BaO Al₂O₃ B₂O₃ total sition wt % Ex- 58 66 7 7 2 16 7 7 4 100 Al₂O₃50 am- 59 66 7 7 2 16 7 7 4 100 ZrO₂ 50 ple 60 66 7 7 2 16 7 7 4 100 CuO50 61 66 7 7 2 16 7 7 4 100 CoO 50 62 66 7 7 2 16 7 7 4 100 TiO₂ 50 6380 0 4 12  4 100 Al₂O₃ 50 64 80 0 4 12  4 100 ZrO₂ 50 65 80 0 4 12  4100 CuO 50 66 80 0 4 12  4 100 CoO 50 67 80 0 4 12  4 100 TiO₂ 50 68 302 4 1 7 10 10 5 6 32 100 Al₂O₃ 50 69 30 2 4 1 7 10 10 5 6 32 100 ZrO₂ 5070 30 2 4 1 7 10 10 5 6 32 100 CuO 50 71 30 2 4 1 7 10 10 5 6 32 100 CoO50 72 30 2 4 1 7 10 10 5 6 32 100 TiO₂ 50 81 35 4 4 2 10 51 4 100 CuO 5082 58 7 7 2 16 15 11 100 CuO 50 83 45 15 15 6 36 15 4 100 CuO 50 84 79 44 2 10 10 1 100 CuO 50 85 66 7 7 2 16 3 15 100 CuO 50 86 66 7 7 2 7 12 6100 CuO 50 87 30 7 7 2 16 10 10 10 6 18 100 CuO 50 88 35 15 14 3 32 10 8 8 7 100 CuO 50 Crack Generation Rate Result of the MoistureResistance Green Body Green-body- Experiment Crack Crack reaching BeforeAfter Comparison Generation Generation Prevention Sandblast SandblastBefore Rate Rate Rate With- With- And Plat- Gener- Gener- Preven- standstand After Strain ing Evalu- ation Evalu- ation Evalu- tion VoltageVoltage Sandblast/ Evalu- Experi- Toler- No. ation Rate/% ation Rate/%ation Rate/% (Ave)/V (Ave)/V % ation ment ance Ex- 58 ⊚ 0 ⊚ 7 ⊚ 100 8481 −4 ⊚ ⊚ ◯ am- 59 ⊚ 1 ⊚ 9 ⊚  89 87 85 −2 ⊚ ⊚ ◯ ple 60 ⊚ 0 ⊚ 6 ⊚ 100 8887 −1 ⊚ ⊚ ◯ 61 ⊚ 0 ⊚ 7 ⊚ 100 86 85 −1 ⊚ ⊚ ◯ 62 ⊚ 1 ⊚ 9 ⊚  89 87 84 −3 ⊚⊚ ◯ 63 ⊚ 0 ◯ 12 ⊚ 100 89 85 −4 ⊚ ◯ ◯ 64 ⊚ 1 ◯ 10 ⊚  90 86 83 −3 ⊚ ◯ ◯ 65⊚ 0 ◯ 12 ⊚ 100 86 86   0 ⊚ ◯ ◯ 66 ⊚ 0 ◯ 13 ⊚ 100 87 86 −1 ⊚ ◯ ◯ 67 ⊚ 1 ◯11 ⊚  91 89 84 −6 ⊚ ◯ ◯ 68 ⊚ 0 ⊚ 8 ⊚ 100 86 83 −3 ⊚ ◯ Δ 69 ⊚ 0 ⊚ 5 ⊚ 10090 86 −4 ⊚ ◯ Δ 70 ⊚ 0 ⊚ 4 ⊚ 100 87 84 −3 ⊚ ◯ Δ 71 ⊚ 0 ⊚ 6 ⊚ 100 89 85 −4⊚ ◯ Δ 72 ⊚ 1 ⊚ 9 ⊚  89 86 84 −2 ⊚ ◯ Δ 81 ⊚ 0 ⊚ 5 ⊚ 100 88 84 −5 ⊚ ⊚ ◯ 82⊚ 0 ⊚ 4 ⊚ 100 89 85 −4 ⊚ ⊚ ◯ 83 ⊚ 1 ⊚ 8 ⊚  88 75 71 −5 ⊚ ⊚ ◯ 84 ⊚ 0 ◯ 15⊚ 100 85 81 −5 ⊚ ⊚ ⊚ 85 ⊚ 1 ⊚ 5 ⊚  80 83 80 −4 ⊚ ⊚ ◯ 86 ⊚ 0 ⊚ 4 ⊚ 100 8984 −6 ⊚ ◯ ⊚ 87 ⊚ 1 ⊚ 8 ⊚  88 88 85 −3 ⊚ ⊚ ◯ 88 ⊚ 1 ⊚ 7 ⊚  86 83 80 −4 ⊚⊚ ◯

Samples No. 58-88 in Table 3 used the oxides of elements chosen from Al,Zr, Ti, Ce, Mn, Cu and Co as the ceramic filler and changed the glasscomposition.

Samples No. 1-53, which include 35-75 wt % of SiO₂, 10-35 wt % of alkalimetal, 10-50 wt % of BaO, and 1-10 wt % of Al₂O₃ as the glasscomposition, are excellent in the crack generation rate, and the resultof the strain experiment and/or plating tolerance, comparing withsamples No. 58-88 in which SiO₂, alkali metal, BaO and/or Al₂O₃ with acontent outside the above-mentioned range were contained as the glasscomposition.

TABLE 4 Ceramic Filler Composition Total Content Content Content GlassComposition (wt %) in the in the in the Alkali Kind of Whole Kind ofWhole Whole Metal Filler Insulating Filler Insulating Insulating Compo-Compo- Layer/ Compo- Layer/ Layer/ No. SiO₂ Na₂O K₂O Li₂O sition BaOAl₂O₃ Total sition 

wt % sition 

wt % wt % Ex- 91 44 13 12 3 28 23  5 100 CuO 60 NiO  2 62 am- 92 44 1312 3 28 23  5 100 CuO 45 NiO  5 50 ple 93 44 13 12 3 28 23  5 100 CuO 30NiO  8 38 94 44 13 12 3 28 23  5 100 CuO 20 NiO 10 30 95 44 13 12 3 2823  5 100 CuO 10 NiO 15 25 96 44 13 12 3 28 23  5 100 CuO 5 NiO  6 11 9744 13 12 3 28 23  5 100 CuO 5 NiO  1  6 Result of the Moisture CrackGeneration Rate Resistance Experiment Green Body Green-body- Compar-Crack Crack reaching Before After ison Generation Generation PreventionSandblast Sandblast Before Rate Rate Rate With- With- and Plat- Gener-Gener- Preven- stand stand After Strain ing Evalu- ation Evalu- ationEvalu- tion Voltage Voltage Sandblast/ Evalu- Experi- Toler- No. ationRate/% ation Rate/% ation Rate/% (Ave)/V (Ave)/V % ation ment ance Ex-91 ⊚  0 ⊚  9 ⊚ 100  86 76 −12 ◯ ◯ ⊚ am- 92 ⊚  0 ⊚  7 ⊚ 100  89 85 −4 ⊚ ⊚⊚ ple 93 ⊚  0 ⊚  8 ⊚ 100  83 80 −4 ⊚ ⊚ ⊚ 94 ⊚  3 ◯ 14 ◯  79  86 75 −13 ◯◯ ⊚ 95 ⊚  3 ◯ 17 ◯  82  84 80 −5 ⊚ ⊚ ⊚ 96 ◯  8 ◯ 19 ◯  58  86 82 −5 ⊚ ⊚⊚ 97 ◯ 10 ◯ 22 ◯  55  84 83 −1 ⊚ ⊚ ⊚

Samples No. 91-97 in Table 4 used the same glass composition in theinsulating layers 16 and changed the kind and content of the ceramiccomposition. Different from samples in Table 1-Table 3, two kinds ofceramic filler, i.e. CuO and NiO were mixed as the ceramic filler with acontent recorded in Table 4.

According to Table 1-Table 4, even when two kinds of ceramic filler wereused, the tendency was the same as the cases when only one kind ofceramic filler was used.

DESCRIPTION OF THE SYMBOLS

-   2, 102 Multilayer ceramic capacitor-   3 Element body-   4 Ceramic sintered body-   6 First external electrode-   8 Second external electrode-   10 Inside dielectric layer-   11 Exterior region-   12 Internal electrode layer-   12A, 12B Lead-out section-   13 Interior region-   14 Capacity region-   15A, 15B Lead-out region-   16 Insulating layer-   16 a Covering section-   104 Substrate-   106 Pressing tool-   114 Pad section-   118A, 118B Experiment terminal-   120 Pressing part

1. A multilayer electronic component comprising an element body where aplurality of internal electrode layers and dielectric layers arealternately laminated, wherein an insulating layer is disposed on atleast one side surface of the element body, and the insulating layercomprises a glass composition and a ceramic composition.
 2. Themultilayer electronic component according to claim 1, wherein when thewhole insulating layer is 100 wt %, a content of the ceramic compositionis 10-70 wt %.
 3. The multilayer electronic component according to claim1, wherein the ceramic composition comprises oxides containing at leastone element from a group of Al, Zr, Ti, Ce, Fe, Mn, Cu, Co and Zn. 4.The multilayer electronic component according to claim 2, wherein theceramic composition comprises oxides containing at least one elementfrom a group of Al, Zr, Ti, Ce, Fe, Mn, Cu, Co and Zn.
 5. The multilayerelectronic component according to claim 1, wherein when the whole glasscomposition is 100 wt %, the glass composition comprises 35-75 wt % ofSiO₂.
 6. The multilayer electronic component according to claim 2,wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 35-75 wt % of SiO₂.
 7. The multilayer electroniccomponent according to claim 3, wherein when the whole glass compositionis 100 wt %, the glass composition comprises 35-75 wt % of SiO₂.
 8. Themultilayer electronic component according to claim 4, wherein when thewhole glass composition is 100 wt %, the glass composition comprises35-75 wt % of SiO₂.
 9. The multilayer electronic component according toclaim 1, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 10-35 wt % of an alkali metal.
 10. The multilayerelectronic component according to claim 2, wherein when the whole glasscomposition is 100 wt %, the glass composition comprises 10-35 wt % ofan alkali metal.
 11. The multilayer electronic component according toclaim 3, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 10-35 wt % of an alkali metal.
 12. The multilayerelectronic component according to claim 4, wherein when the whole glasscomposition is 100 wt %, the glass composition comprises 10-35 wt % ofan alkali metal.
 13. The multilayer electronic component according toclaim 5, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 10-35 wt % of an alkali metal.
 14. The multilayerelectronic component according to claim 6, wherein when the whole glasscomposition is 100 wt %, the glass composition comprises 10-35 wt % ofan alkali metal.
 15. The multilayer electronic component according toclaim 7, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 10-35 wt % of an alkali metal.
 16. The multilayerelectronic component according to claim 8, wherein when the whole glasscomposition is 100 wt %, the glass composition comprises 10-35 wt % ofan alkali metal.
 17. The multilayer electronic component according toclaim 1, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 10-50 wt % of BaO.
 18. The multilayer electroniccomponent according to claim 2, wherein when the whole glass compositionis 100 wt %, the glass composition comprises 10-50 wt % of BaO.
 19. Themultilayer electronic component according to claim 1, wherein when thewhole glass composition is 100 wt %, the glass composition comprises1-10 wt % of Al₂O₃.
 20. The multilayer electronic component according toclaim 2, wherein when the whole glass composition is 100 wt %, the glasscomposition comprises 1-10 wt % of Al₂O₃.